On the effect of water and oxygen in chemical vapor deposition of boron nitride

A Review on Titanium Nitride and Titanium Carbide Single and Multilayer Coatings Deposited by Plasma Assisted Chemical Vapor Deposition

In this paper, we reviewed researches about the titanium nitride (TiN) and titanium carbide (TiC) single and multilayer coatings. These coatings were deposited by the plasma assisted chemical vapor deposition (PACVD) technique. Plasma-based technologies are used for the processing of thin films and coatings for different applications such as automobile and aerospace parts, computer disc drives,...

Synthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler

Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...

Patterned Growth of Long and Clean Boron Nitride Nanotubes on Substrates

For the first time, patterned growth of boron nitride nanotubes (BNNTs) on Si substrates has been achieved by catalytic chemical vapor deposition (CCVD). Following the boron oxide chemical pathway and our growth vapor trapping approach, high quality and quantity BNNTs can be produced. Effective catalysts have been found to facilitate the growth of BNNTs, while some critical parameters of the sy...

Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation

Patterned Growth of Boron Nitride Nanotubes by Catalytic Chemical Vapor Deposition

For the first time, patterned growth of boron nitride nanotubes is achieved by catalytic chemical vapor deposition (CCVD) at 1200 C using MgO, Ni, or Fe as the catalysts, and an Al2O3 diffusion barrier as underlayer. The as-grown BNNTs are clean, vertically aligned, and have high crystallinity. Near band-edge absorption ∼6.0 eV is detected, without significant sub-band absorption centers. Elect...